10th Small Systems Simulation Symposium

Join leading researchers and practitioners in the field of system simulation at the University of Niš, Faculty of Electronic Engineering

February 12-14, 2026 | University of Niš, Faculty of Electronic Engineering

An Autocalibrated CMOS Bandgap Reference with Improved PVT Robustness in 65 nm CMOS Technology

https://doi.org/10.46793/SSSS2026.070R



Authors:

  • Nikola Ristić

  • Radivoje Ðurić

    The paper is available at the following link: PDF



    Abstract:

    This paper presents a precision CMOS bandgap reference with an integrated autocalibration mechanism, implemented in the TSMC 65 nm GP process. The circuit operates from dual supply voltages of 1.8 V for analog and 1.2 V for digital domains, consuming 1.064 mW across the temperature range of – 40 °C to 125 °C and occupying area of 0.066 mm2. It provides a 1.2265 V ± 8.5 mV (3σ) bandgap output, a 1 V reference, and proportional-to-absolute-temperature (PTAT) and zero- temperature-coefficient (ZTAT) reference currents. The autocalibration algorithm adjusts internal PTAT currents using an external precision resistor as a calibration standard, effectively compensating for process variations without manual trimming. Simulation results demonstrate high stability, low temperature dependence, and improved process robustness, making the circuit suitable for high precision mixed-signal systems-on-chip applications.



    Keywords:

    Bandgap reference, CMOS, process variation compensation, autocalibration, analog CMOS design, TSMC 65nm technology.



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